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| STD17NF03L Datasheet, PDF (1/9 Pages) STMicroelectronics – N-CHANNEL 30V - 0.038ohm - 17A - DPAK/IPAK STripFET™ POWER MOSFET | |||
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STD17NF03L
N-CHANNEL 30V - 0.038⦠- 17A - DPAK/IPAK
STripFET⢠POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STD17NF03L
30V
<0.05â¦
17A
s TYPICAL RDS(on) = 0.038â¦
s EXCEPTIONAL dv/dt CAPABILITY
s APPLICATION ORIENTED CHARACTERIZATION
s ADD SUFFIX âT4â FOR ORDERING IN TAPE &
REEL
s ADD SUFFIX â-1â FOR ORDERING IN IPAK
VERSION
DESCRIPTION
This Power Mosfet is the latest development of STMi-
croelectronics unique âSingle Feature Sizeâ¢â strip-
based process. The resulting transistor shows ex-
tremely high packing density for low on-resistance,
rugged avalance characteristics and less critical align-
ment steps therefore a remarkable manufacturing re-
producibility.
3
2
1
IPAK
3
1
DPAK
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s DC-DC & DC-AC CONVERTERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s SOLENOID AND RELAY DRIVERS
s AUTOMOTIVE ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kâ¦)
VGS
Gate- source Voltage
ID
Drain Current (continuos) at TC = 25°C
ID
Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS (2) Single Pulse Avalanche Energy
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
(q) Pulse width limited by safe operating area
Aug 2000
Value
30
Unit
V
30
V
±20
V
17
A
12
A
68
A
20
W
0.13
W/°C
6
V/ns
200
mJ
â65 to 175
°C
175
°C
(1) ISD â¤17A, di/dt â¤300A/µs, VDD ⤠V(BR)DSS, Tj ⤠TJMAX.
(2) Starting Tj=25°C, ID=11A, VDD=15V
1/9
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