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| STBV32_05 Datasheet, PDF (2/9 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | |||
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STBV32
Symbol
Tstg
TJ
Parameter
Storage Temperature
Max. Operating Junction Temperature
Value
Unit
-65 to 150
°C
150
°C
Table 3: Thermal Data
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-Ambient
Max
Max
83.3
112
oC/W
oC/W
Table 4: Electrical Characteristics (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ.
ICEV Collector Cut-off Current VCE = 700 V
(VBE = -1.5 V)
VCE = 700 V
Tj =125 oC
V(BR)EBO Emitter-Base
IE = 10 mA
9
Breakdown Voltage
(IC = 0 )
VCEO(sus)* Collector-Emitter
IC = 10 mA
400
Sustaining Voltage
VCE(sat)*
VBE(sat)*
hFE
tr
ts
tf
ts
(IB = 0 )
Collector-Emitter
Saturation Voltage
IC = 0.5 A
IC = 1 A
IC = 1.5 A
Base-Emitter Saturation IC = 0.5 A
Voltage
IC = 1 A
DC Current Gain
IC = 0.5 A
IC = 1 A
RESISTIVE LOAD
IC = 1 A
Rise Time
Storage Time
Fall Time
IB1 = -IB2 = 200 mA
(see figure 12)
INDUCTIVE LOAD
Storage Time
IC = 1 A
IB1 = 200 mA
L = 50 mH
(see figure 13)
* Pulsed: Pulsed duration = 300 µs, duty cycle ⤠1.5 %.
IB = 100 mA
IB = 250 mA
IB = 500 mA
IB = 100 mA
IB = 250 mA
VCE = 2 V
VCE = 2 V
VCC = 125 V
tp = 25 µs
Vclamp = 300 V
VBE(off) = -5V
RBB = 0
8
5
0.8
Max.
1
5
18
0.5
1
1.5
1.0
1.2
35
25
1
4
0.7
Unit
mA
mA
V
V
V
V
V
V
V
µs
µs
µs
µs
2/9
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