STBV32_05 Datasheet, PDF (1/9 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

STBV32
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
n HIGH VOLTAGE CAPABILITY
n LOW SPREAD OF DYNAMIC PARAMETERS
n MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
n VERY HIGH SWITCHING SPEED
APPLICATIONS
n COMPACT FLUORESCENT LAMPS (CFLS)
DESCRIPTION
The device is manufactured using High Voltage
Multi Epitaxial Planar technology for high
switching speeds and high voltage capability. It
uses a Cellular Emitter structure with planar edge
termination to enhance switching speeds while
maintaining the wide RBSOA.
The STBV series is designed for use in Compact
Fluorescent Lamps.
Figure 1: Package
TO-92
Figure 2: Internal Schematic Diagram
Table 1: Order Codes
Part Number
STBV32
STBV32-AP
Marking
BV32
BV32
Package
TO-92
TO-92
Table 2: Absolute Maximum Ratings
Symbol
V_CES
V_CEO
V_EBO
I_C
I_CM
I_B
I_BM
P_tot
Parameter
Collector-Emitter Voltage (V_BE = 0)
Collector-Emitter Voltage (I_B = 0)
Emitter-Base Voltage (I_C = 0, I_B = 0.5 A, t_p < 10 ms)
Collector Current
(f ≥ 100 Hz, duty-cycle ≤ 50 %, T_C = 25 ^oC)
Collector Peak Current (t_p < 5ms)
Base Current
Base Peak Current (t_p < 5ms)
Total Dissipation at T_C = 25 ^oC
April 2005
Packaging
Bulk
Ammopack
Value
700
400
V_(BR)EBO
1.5
3
0.5
1.5
1.5
Rev. 2
Unit
V
V
V
A
A
A
A
W
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