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STB90NF3LL Datasheet, PDF (2/7 Pages) STMicroelectronics – N-CHANNEL 30V - 0.0048 ohm - 80A D2PAK LOW GATE CHARGE STripFET™ II POWER MOSFET
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STB90NF3LL
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
0.75
Rthj-amb Thermal Resistance Junction-ambient
Max
62.5
Tl
Maximum Lead Temperature For Soldering Purpose
300
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V(BR)DSS Drain-source
ID = 250 µA, VGS = 0
30
V
Breakdown Voltage
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating TC = 125°C
1
µA
10
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 16 V
±100
nA
ON (*)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS
ID = 250 µA
VGS = 10 V
VGS = 4.5 V
ID = 40 A
ID = 40 A
Min.
1
Typ. Max.
0.0048 0.0055
0.0070 0.0090
Unit
V
Ω
Ω
DYNAMIC
Symbol
gfs (*)
Ciss
Coss
Crss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS = 15 V
ID = 40 A
VDS = 25V f = 1 MHz VGS = 0
Min.
Typ.
TBD
3000
950
190
Max.
Unit
S
pF
pF
pF
2/7
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