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| STB80PF55 Datasheet, PDF (2/7 Pages) STMicroelectronics – P-CHANNEL 55V - 0.016 ohm - 80A D2PAK STripFET™ II POWER MOSFET | |||
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STB80PF55
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
0.5
Rthj-amb Thermal Resistance Junction-ambient
Max
62.5
Tl
Maximum Lead Temperature For Soldering Purpose
Typ
300
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min. Typ.
V(BR)DSS Drain-source
ID = 250 µA, VGS = 0
55
Breakdown Voltage
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating TC = 125°C
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 16 V
°C/W
°C/W
°C
Max.
Unit
V
1
µA
10
µA
±100
nA
ON (*)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS
ID = 250 µA
VGS = 10 V
ID = 40 A
Min.
2
Typ.
3
0.016
Max.
4
0.018
Unit
V
â¦
DYNAMIC
Symbol
gfs
Parameter
Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max,
ID = 40 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
32
5500
1130
600
Max.
Unit
S
pF
pF
pF
2/7
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