STB80PF55 Datasheet, PDF (1/7 Pages) STMicroelectronics – P-CHANNEL 55V - 0.016 ohm - 80A D2PAK STripFET™ II POWER MOSFET

STB80PF55
P-CHANNEL 55V - 0.016 Ω - 80A D²PAK
STripFET™ II POWER MOSFET
PRELIMINARY DATA
TYPE
V_DSS
R_DS(on)
I_D
STB80PF55
55 V < 0.018 Ω 80 A
s TYPICAL R_DS(on) = 0.016 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
3
1
D²PAK
TO-263
(Suffix “T4”)
ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s MOTOR CONTROL
s DC-DC & DC-AC CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D(*)
Drain Current (continuos) at T_C = 25°C
I_D
Drain Current (continuos) at T_C = 100°C
I_DM(•) Drain Current (pulsed)
P_tot
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt ⁽¹⁾ Peak Diode Recovery voltage slope
E_AS ⁽²⁾ Single Pulse Avalanche Energy
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
(*) Current Limited by Package
Value
55
55
± 16
80
57
320
300
2
7
1.4
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
Note: For the P-CHANNEL MOSFET actual polarity of voltages and
current has to be reversed
(1) I_SD ≤ 40A, di/dt ≤ 300A/µs, V_DD ≤ V_(BR)DSS, T_j ≤ T_JMAX.
(2) Starting T_j = 25 ^oC, I_D = 80A, V_DD = 40V
February 2002
1/7
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.