STB7NB40 Datasheet, PDF (2/6 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

STB7NB40
THERMAL DATA
R_{t hj-ca se}
Rt hj- amb
R_{thc- si nk}
T_l
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
1.25
62.5
0.5
300
o_C/W
o_C/W
o_C/W
o_C
AVALANCHE CHARACTERISTICS
S ymb ol
IAR
E AS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(starting T_j = 25 ^oC, I_D = I_AR , V_DD = 50 V)
Max Valu e
7
300
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (T_case = 25 ^oC unless otherwise specified)
OFF
S ymb ol
V(BR)DSS
IDSS
I_GSS
P a ra m et er
Test Conditions
Dr ain- sou rc e
Breakdown Voltage
ID = 250 µA VGS = 0
Zero G ate Voltage
Drain Current (V_GS = 0)
Gate-body Leakage
Current (VDS = 0)
VDS = Max Rating
V_DS = Max Rating x 0.8
VGS = ± 30 V
T_c = 125 ^oC
Min.
400
Typ. Max.
1
50
± 100
Unit
V
µA
µA
nA
ON (∗)
S ymb ol
V _{GS(th )}
R_{DS( o n )}
I_{D(o n)}
P a ra m et er
Test Conditions
Gate Threshold
Voltage
VDS = VGS ID = 250 µA
Static Drain-source On V_GS = 10V I_D = 3.5 A
Resistance
On St ate Drain Current V_DS > I_D(on) x R_{DS(on) max}
VGS = 10 V
Min.
3
Typ .
4
Max.
5
Unit
V
0.75 0.9
Ω
7
A
DYNAMIC
S ymb ol
gfs (∗)
Ciss
Coss
Crss
P a ra m et er
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max ID = 3.5 A
Min.
2.5
Typ .
4.2
Max.
Unit
S
VDS = 25 V f = 1 MHz VGS = 0
705 720 pF
132 175 pF
17
25
pF
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