STB7NB40 Datasheet, PDF (1/6 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

STB7NB40
N - CHANNEL ENHANCEMENT MODE
PowerMESH™ MOSFET
TYPE
STB7NB40
V _DSS
400 V
R_DS(on)
< 0.9 Ω
I_D
7.0 A
s TYPICAL RDS(on) = 0.75 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
s FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
DESCRIPTION
Using the latest high voltage technology, SGS-Thomson
has designed an advanced family of power Mosfets with
outstanding performances. The new patent pending strip
layout coupled with the Company’s proprietary edge
termination structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteristics.
PRELIMINARY DATA
3
1
D²PAK
TO-263
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
V_GS
I_D
I_D
Drain- gate Voltage (R_GS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at T_c = 100 ^oC
I_DM ( •)
Ptot
Drain Current (pulsed)
Tot al Dissipation at Tc = 25 ^oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
T_stg Storage Temperature
Tj
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
Value
STB7NB40
400
400
± 30
7
4.4
28
100
0.8
4.5
-65 to 150
150
(1) ISD ≤ 7A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Uni t
V
V
V
A
A
A
W
W/^oC
V/ ns
o_C
o_C
October 1997
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.