STB70NFS03L Datasheet, PDF (2/6 Pages) STMicroelectronics – N - CHANNEL 30V - 0.008ohm - 70A D2PAK STripFET MOSFET PLUS SCHOTTKY RECTIFIER

STB70NFS03L
THERMAL DATA
R_thj-case
R _{th j -a mb}
T_l
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Maximum Lead Temperature F or Soldering Purpose
1. 5
6 2. 5
1 75
o_C/W
o_C/W
o_C
ELECTRICAL CHARACTERISTICS (T_case = 25 ^oC unless otherwise specified)
OFF
Symbo l
V (BR)D SS
I_DSS
I_GSS
P ar am et e r
Test Conditions
Dr ain- s our c e
Breakdown Voltage
ID = 250 µA VGS = 0
Zero Gat e Volt age V_DS = Max Rat ing
Drain Current (V_GS = 0) V_DS = Max Rat ing
Gate-body
Leakage V_GS = ± 20 V
Current (V_DS = 0)
T_c =125 ^oC
Min.
30
Typ. Max.
1
10
± 100
Unit
V
µA
µA
nA
ON (∗)
Symbo l
V_GS(th)
RDS(on)
I_{D(o n)}
P ar am et e r
Test Conditions
Gat e Threshold Voltage V_DS = V_GS I_D = 250 µA
Static Drain-source On VGS = 10 V
Resistance
V_GS = 5 V
ID = 35 A
I_D = 18 A
On State Drain Current V_DS > I_{D(o n)} x R_{DS(on )max}
V_GS = 10 V
Min.
1
70
Typ. Max.
0.008 0.01
0.015 0.018
Unit
V
Ω
Ω
A
DYNAMIC
Symbo l
g_fs (∗)
C_iss
C_oss
C_rss
P ar am et e r
Test Conditions
Forward
Transconductance
V_DS > I_{D(o n)} x R_{DS(on )ma x} I_D =35 A
Input Capacitance
V_DS = 25 V
Output Capacitance
Reverse
T ransfer
Capacitance
f = 1 MHz
V_GS = 0
Min.
Typ.
40
Max.
Unit
S
1470
pF
490
pF
110
pF
2/6