STB70NFS03L Datasheet, PDF (1/6 Pages) STMicroelectronics – N - CHANNEL 30V - 0.008ohm - 70A D2PAK STripFET MOSFET PLUS SCHOTTKY RECTIFIER

®
STB70NFS03L
STripFET^™N
- CHANNEL 30V - 0.008Ω - 70A D²PAK
MOSFET PLUS SCHOTTKY RECTIFIER
PRELIMINARY DATA
MAIN PRODUCT CHARACTERISTICS
MOSFET
V _{D SS}
R_{DS(on )}
30V <0.01Ω
SCHOTTKY
I_{F (AV)}
V_RRM
3A
30V
I_D
70A
V _{F(M AX)}
0. 5 1V
DESCRIPTION:
This product associates a Power MOSFET of the
third generation of ST Microelectronics unique
”Single Feature Size” strip-based process and a
low drop Schottky diode. The transistor shows the
best trade-off between on-resistance and gate
charge. Used as low side in buck regulators, the
product is the best solution in terms of conduction
losses and space saving.
3
1
D²PAK
TO-263
(suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
MOSFET ABSOLUTE MAXIMUM RATINGS
S ym b o l
P ar ame te r
V_DS Drain-source Voltage (V_GS = 0)
VDGR Drain- gat e Voltage (RGS = 20 kΩ)
V_GS
I_D
I_D
ID M( •)
P_tot
Gate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at T_c = 100 ^oC
Drain Current (pulsed)
Tot al Dissipation at T_c = 25 ^oC
Derating Factor
T_stg Storage Temperature
T_j
Max. Operating Junct ion Temperature
(•) Pulse width limited by safe operating area
SCHOTTKY ABSOLUTE MAXIMUM RATINGS
Symb ol
V _{R RM}
I_F(RMS)
I_{F (AV)}
Parameter
Repetitive Peak Reverse Voltage
RMS F orward Current
Average F orward Current
I_FSM Surge Non Repetit ive F orward Current
dv/dt Critical Rate Of Rise O f Reverse Voltage
April 2000
T_L=125 ^oC
δ =0.5
tp= 10 ms
Sinusoidal
V alu e
30
30
± 22
70
50
280
100
0.67
-65 to 175
175
V alu e
30
20
3
75
10000
Unit
V
V
V
A
A
A
W
W/^oC
o_C
o_C
Un it
V
A
A
A
V/µs
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