STB6NB90 Datasheet, PDF (2/5 Pages) STMicroelectronics – N - CHANNEL 900V - 1.7OHM - 5.8A - D2PAK PowerMESHO MOSFET

STB6NB90
THERMAL DATA
R_thj-case
Rthj-amb
R_thc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
0.92
62.5
0.5
300
o_C/W
oC/W
o_C/W
o_C
AVALANCHE CHARACTERISTICS
Symbol
I_AR
E_AS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Single Pulse Avalanche Energy
(starting T_j = 25 ^oC, I_D = I_AR, V_DD = 50 V)
Max Value
5.8
750
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
V_(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA VGS = 0
I_DSS
I_GSS
Zero Gate Voltage
V_DS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
Gate-body Leakage
Current (V_DS = 0)
V_GS = ± 30 V
Tc = 125 ^oC
Min.
900
Typ.
Max.
Unit
V
1
µA
50
µA
± 100 nA
ON (∗)
Symbol
V_GS(th)
R_DS(on)
I_D(on)
Parameter
Test Conditions
Gate Threshold
Voltage
V_DS = V_GS I_D = 250 µA
Static Drain-source On V_GS = 10V I_D = 3 A
Resistance
On State Drain Current V_DS > I_D(on) x R_DS(on)max
V_GS = 10 V
Min.
3
Typ.
4
Max.
5
Unit
V
1.7
2
Ω
5.8
A
DYNAMIC
Symbol
g_fs (∗)
C_iss
C_oss
C_rss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
V_DS > I_D(on) x R_DS(on)max I_D = 3 A
V_DS = 25 V f = 1 MHz V_GS = 0
Min.
1.5
Typ.
6
Max.
Unit
S
1400
pF
160
pF
18
pF
2/5