STB6NB90 Datasheet, PDF (1/5 Pages) STMicroelectronics – N - CHANNEL 900V - 1.7OHM - 5.8A - D2PAK PowerMESHO MOSFET

®
STB6NB90
N - CHANNEL 900V - 1.7Ω - 5.8A - D²PAK
PowerMESH™ MOSFET
TYPE
STB6NB90
V_DSS
900 V
R_DS(on)
< 2.0 Ω
I_D
5.8 A
PRELIMINARY DATA
s TYPICAL RDS(on) = 1.7 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
s ADD SUFFIX "T4" FOR ORDERING IN TAPE
& REEL (500 UNITS)
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
D²PAK
TO-263
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS Drain-source Voltage (V_GS = 0)
V_DGR
V_GS
I_D
ID
I_DM(•)
Ptot
Drain- gate Voltage (R_GS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at Tc = 100 ^oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 ^oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
T_stg Storage Temperature
T_j
Max. Operating Junction Temperature
(•) Limited only by maximum temperature allowed
February 1999
Value
Unit
900
V
900
V
± 30
V
5.8
A
3.6
A
23
A
135
1.08
W
W/^oC
4.5
V/ns
-65 to 150
o_C
150
o_C
(1) ISD ≤ 6 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/5