STB60NH02L_04 Datasheet, PDF (2/11 Pages) STMicroelectronics – N-CHANNEL 24V - 0.0085 ohm - 60A D2PAK STripFET TM III POWER MOSFET

STB60NH02L
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
2.14
Rthj-amb Thermal Resistance Junction-ambient
Max
62.5
T_l
Maximum Lead Temperature For Soldering Purpose
300
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (T_CASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V_(BR)DSS Drain-source
I_D = 25 mA, V_GS = 0
24
V
Breakdown Voltage
I_DSS
Zero Gate Voltage
Drain Current (V_GS = 0)
V_DS = 20 V
V_DS = 20 V T_C = 125°C
1
µA
10
µA
I_GSS
Gate-body Leakage
Current (V_DS = 0)
V_GS = ± 20V
±100
nA
ON ⁽⁴⁾
Symbol
V_GS(th)
R_DS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
V_DS = V_GS
I_D = 250 µA
V_GS = 10 V
V_GS = 5 V
I_D = 30 A
I_D = 15 A
Min. Typ. Max. Unit
1
1.8
2.5
V
0.0085 0.0105 Ω
0.012 0.020
Ω
DYNAMIC
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
g_fs ⁽⁴⁾
Forward Transconductance VDS = 15 V
I_D = 25 A
27
S
C_iss
Input Capacitance
V_DS = 15V f = 1 MHz V_GS = 0
1400
pF
C_oss
Output Capacitance
400
pF
C_rss
Reverse Transfer
55
pF
Capacitance
R_G
Gate Input Resistance
f = 1 MHz Gate DC Bias = 0
1
Ω
Test Signal Level = 20 mV
Open Drain
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