STB60NH02L_04 Datasheet, PDF (1/11 Pages) STMicroelectronics – N-CHANNEL 24V - 0.0085 ohm - 60A D2PAK STripFET TM III POWER MOSFET

STB60NH02L
N-CHANNEL 24V - 0.0085 Ω - 60A D²PAK
STripFET™ III POWER MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STB60NH02L
24 V < 0.0105 Ω 60 A
■ TYPICAL R_DS(on) = 0.0085 Ω @ 10 V
■ TYPICAL R_DS(on) = 0.012 Ω @ 5 V
■ R_DS(ON) * Qg INDUSTRY’s BENCHMARK
■ CONDUCTION LOSSES REDUCED
■ SWITCHING LOSSES REDUCED
■ LOW THRESHOLD DEVICE
■ SURFACE-MOUNTING D²PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
DESCRIPTION
The STB60NH02L utilizes the latest advanced design
rules of ST’s proprietary STripFET™ technology. This is
suitable fot the most demanding DC-DC converter
application where high efficiency is to be achieved.
APPLICATIONS
■ SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY DC/DC CONVERTES
3
1
D²PAK
TO-263
(Suffix “T4”)
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
SALES TYPE
STB60NH02LT4
MARKING
B60NH02L
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_spike(1)
V_DS
V_DGR
V_GS
Drain-source Voltage Rating
Drain-source Voltage (V_GS = 0)
Drain-gate Voltage (R_GS = 20 kΩ)
Gate- source Voltage
I_D
Drain Current (continuous) at T_C = 25°C
I_D
Drain Current (continuous) at T_C = 100°C
I_DM(2)
Drain Current (pulsed)
P_tot
Total Dissipation at T_C = 25°C
Derating Factor
E_AS ⁽³⁾
T_stg
Single Pulse Avalanche Energy
Storage Temperature
T_j
Max. Operating Junction Temperature
May 2004
PACKAGE
TO-263
Value
30
24
24
± 20
60
43
240
70
0.47
280
-55 to 175
PACKAGING
TAPE & REEL
Unit
V
V
V
V
A
A
A
W
W/°C
mJ
°C
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