STB55NF06 Datasheet, PDF (2/12 Pages) STMicroelectronics – N-CHANNEL 60V - 0.015 ohm - 50A TO-220/TO-220FP/I PAK/D²PAK STripFET™ II POWER MOSFET

STB50NF06 STB55NF06-1 STP55NF06 STP55NF06FP
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
Rthj-amb Thermal Resistance Junction-ambient
Max
T_l
Maximum Lead Temperature For Soldering Purpose
(1.6 mm from case, for 10 sec)
I^²PAK
D²PAK
TO-220
TO-220FP
1.36
5
62.5
300
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (T_case = 25 °C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V_(BR)DSS
Drain-source
Breakdown Voltage
I_D = 250 µA, V_GS = 0
60
V
I_DSS
Zero Gate Voltage
Drain Current (V_GS = 0)
V_DS = Max Rating
V_DS = Max Rating T_C = 125°C
1
µA
10
µA
I_GSS
Gate-body Leakage
Current (V_DS = 0)
V_GS = ± 20 V
±100
nA
ON ^(*)
Symbol
V_GS(th)
R_DS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
V_DS = V_GS
I_D = 250 µA
V_GS = 10 V
I_D = 27.5 A
Min.
2
Typ.
3
0.015
Max.
4
0.018
Unit
V
Ω
DYNAMIC
Symbol
g_fs ^(*)
C_iss
C_oss
C_rss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
V_DS = 15 V
I_D = 27.5 A
V_DS = 25V, f = 1 MHz, V_GS = 0
Min.
Typ.
18
1530
300
105
Max.
Unit
S
pF
pF
pF
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