STB55NF06 Datasheet, PDF (1/12 Pages) STMicroelectronics – N-CHANNEL 60V - 0.015 ohm - 50A TO-220/TO-220FP/I PAK/D²PAK STripFET™ II POWER MOSFET

STB55NF06 STB55NF06-1
STP55NF06 STP55NF06FP
N-CHANNEL 60V - 0.015 Ω - 50A TO-220/TO-220FP/I^²PAK/D²PAK
STripFET™ II POWER MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STP55NF06
STB55NF06-1
STB55NF06
STP55NF06FP
60 V
60 V
60 V
60 V
<0.018 Ω
<0.018 Ω
<0.018 Ω
<0.018 Ω
50 A
50 A
50 A
50 A(*)
s TYPICAL R_DS(on) = 0.015 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s SURFACE-MOUNTING D²PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
s THROUGH-HOLE I²PAK (TO-262) POWER
PACKAGE IN TUBE (SUFFIX “-1")
DESCRIPTION
This Power MOSFET is the latest development of ST-
Microelectronis unique "Single Feature Size™" strip-
based process. The resulting transistor shows ex-
tremely high packing density for low on-resistance,
rugged avalanche characteristics and less critical
alignment steps therefore a remarkable manufactur-
ing reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SWITCHING SPEED
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
s AUTOMOTIVE
TO-220FP
3
2
1
TO-220
3
2
1
123
I^²PAK
TO-262
(Suffix “-1”)
3
1
D^²PAK
TO-263
(Suffix “T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuous) at T_C = 25°C
I_D
Drain Current (continuous) at T_C = 100°C
I_DM(•)
Drain Current (pulsed)
P_tot
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt ⁽¹⁾ Peak Diode Recovery voltage slope
E_AS ⁽²⁾ Single Pulse Avalanche Energy
T_stg
Storage Temperature
T_j
Operating Junction Temperature
(•) Pulse width limited by safe operating area
(*)Refer to soa for the max allowable current value on FP-type due
to Rth value
March 2003
.
Value
STP_B55NF06(-1)
STP55NF06FP
60
60
± 20
50
50(*)
35
35(*)
200
200(*)
110
30
0.73
0.2
7
350
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
(1) _{ISD ≤50A, di/dt ≤400A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX}
(2) Starting Tj = 25 ^oC, ID = 25A, VDD= 30V
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