STB30NS15 Datasheet, PDF (2/9 Pages) STMicroelectronics – N-CHANNEL 150V - 0.075 ohm - 30A D2PAK LOW GATE CHARGE STripFET™ POWER MOSFET

STB30NS15
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
1.36
Rthj-amb Thermal Resistance Junction-ambient
Max
62.5
T_l
Maximum Lead Temperature For Soldering Purpose
300
ELECTRICAL CHARACTERISTICS (T_case = 25 °C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min. Typ.
V_(BR)DSS Drain-source
I_D = 250 µA, V_GS = 0
150
Breakdown Voltage
I_DSS
Zero Gate Voltage
Drain Current (V_GS = 0)
V_DS = Max Rating
V_DS = Max Rating T_C = 125°C
I_GSS
Gate-body Leakage
Current (V_DS = 0)
V_GS = ± 20V
°C/W
°C/W
°C
Max.
Unit
V
1
µA
10
µA
±100
nA
ON ^(*)
Symbol
V_GS(th)
R_DS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
V_DS = V_GS
I_D = 250 µA
V_GS = 10 V
I_D = 15 A
Min.
2
Typ.
3
0.075
Max.
4
0.1
Unit
V
Ω
DYNAMIC
Symbol
g_fs ^(*)
C_iss
C_oss
C_rss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
V_DS = 20 V
I_D = 15 A
V_DS = 25V f = 1 MHz V_GS = 0
Min.
Typ.
8
990
175
110
Max.
Unit
S
pF
pF
pF
2/9