STB30NS15 Datasheet, PDF (1/9 Pages) STMicroelectronics – N-CHANNEL 150V - 0.075 ohm - 30A D2PAK LOW GATE CHARGE STripFET™ POWER MOSFET

STB30NS15
N-CHANNEL 150V - 0.075 Ω - 30A D²PAK
LOW GATE CHARGE STripFET™ POWER MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STB30NS15
150 V
<0.1 Ω
30 A
s TYPICAL R_DS(on) = 0.075 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION
s FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique STripFET process has specifically been designed
to minimize input capacitance and gate charge. It is
therefore suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended
for any applications with low gate drive requirements.
APPLICATIONS
s HIGH-EFFICIENCY DC-DC CONVERTERS
s UPS AND MOTOR CONTROL
3
1
D²PAK
TO-263
(Suffix “T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuos) at T_C = 25°C
I_D
Drain Current (continuos) at T_C = 100°C
I_DM(•) Drain Current (pulsed)
P_tot
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt ⁽¹⁾ Peak Diode Recovery voltage slope
E_AS ⁽²⁾ Single Pulse Avalanche Energy
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
•) Pulse width limited by safe operating area.
October 2001
Value
150
150
± 20
30
21
120
110
0.73
2
250
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
(1) ISD ≤ 30A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(2) Starting T_j = 25 ^oC, I_D = 15A, V_DD = 25V
1/9