STB30NE06L Datasheet, PDF (2/6 Pages) STMicroelectronics – N - CHANNEL 60V - 0.35ohm - 30A - D2PAK STripFET] POWER MOSFET

STB30NE06L
THERMAL DATA
R_thj-case
Rt h j-a m b
R_thc-sink
T_l
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature F or Soldering Purpose
1. 87 5
6 2. 5
0. 5
3 00
o_C/W
oC/W
o_C/W
o_C
AVALANCHE CHARACTERISTICS
Symbo l
I_AR
E_AS
P a ra met er
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T_j max)
Single Pulse Avalanche Energy
(starting T_j = 25 ^oC, I_D = I_AR, V_DD = 50 V)
Max Value
20
100
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (T_case = 25 ^oC unless otherwise specified)
OFF
Symbo l
V _{(BR)D SS}
I_DSS
I_GSS
P ar am et e r
Test Conditions
Dr ain- s our c e
Breakdown Voltage
I_D = 250 µA V_GS = 0
Zero Gate Voltage
V_DS = Max Rat ing
Drain Current (V_GS = 0) V_DS = Max Rat ing
T_c = 125 ^oC
Gate-body Leakage
Current (VDS = 0)
V_GS = ± 20 V
Min.
60
Typ. Max.
1
10
± 100
Unit
V
µA
µA
nA
ON (∗)
Symbo l
V_GS(th)
R_DS(on)
I_{D(o n)}
P ar am et e r
Test Conditions
Gat e Threshold Voltage V_DS = V_GS I_D = 250 µA
Static Drain-source On V_GS = 5 V I _D = 15 A
Resistance
V_GS = 10 V I_D = 15 A
On State Drain Current V_DS > I_{D(o n)} x R_{DS(on )max}
V_GS = 10 V
Min.
1
30
Typ.
1.75
0.045
0.035
Max.
2.5
0.06
0.05
Unit
V
Ω
Ω
A
DYNAMIC
Symbo l
g_fs (∗)
C_iss
C_oss
C_rss
P ar am et e r
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
V_DS > I_{D(o n)} x R_{DS(on )ma x} I_D =15 A
V_DS = 25 V f = 1 MHz V_GS = 0
Min.
10
Typ.
18
Max.
Unit
S
1350
pF
195
pF
58
pF
2/6