STB30NE06L Datasheet, PDF (1/6 Pages) STMicroelectronics – N - CHANNEL 60V - 0.35ohm - 30A - D2PAK STripFET] POWER MOSFET

®
STB30NE06L
N - CHANNEL 60V - 0.35Ω - 30A - D²PAK
STripFET™ POWER MOSFET
TYPE
V _DSS
R_DS(on)
I_D
STB30NE06L
60 V
< 0.05 Ω
30 A
s TYPICAL RDS(on) = 0.035 Ω
s 100% AVALANCHE TESTED
s LOW GATE CHARGE 100 ^oC
s APPLICATION ORIENTED
CHARACTERIZATION
s FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronis unique ”Single Feature Size™”
strip-based process. The resulting transistor
shows extremely high packing density for low
on-resistance, rugged avalance characteristics
and less critical alignment steps therefore a
remarkable manufacturing reproducibility.
PRELIMINARY DATA
3
1
D²PAK
TO-263
(suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s DC MOTOR CONTROL
s DC-DC & DC-AC CONVERTERS
s SYNCHRONOUS RECTIFICATION
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
P a ramet er
V _DS
V _DGR
V_GS
I_D
ID
Drain-source Voltage (V_GS = 0)
Drain- gate Voltage (R_GS = 20 kΩ)
G ate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at Tc = 100 ^oC
I_DM (•)
P_tot
Drain Current (pulsed)
T otal Dissipat ion at T_c = 25 ^oC
Derating Factor
Tstg Storage Temperature
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
March 1999
Va l u e
60
60
± 20
30
21
120
80
0.53
-65 to 175
175
Un it
V
V
V
A
A
A
W
W /^o C
o_C
o_C
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