STB190NF04 Datasheet, PDF (2/9 Pages) STMicroelectronics – N-CHANNEL 40V - 3.9 mW - 120A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET

STB190NF04/-1 STP190NF04
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
0.48
Rthj-amb Thermal Resistance Junction-ambient
Max
50
T_l
Maximum Lead Temperature For Soldering Purpose
Typ
300
ELECTRICAL CHARACTERISTICS (T_case = 25 °C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min. Typ.
V_(BR)DSS Drain-source
Breakdown Voltage
I_D = 250 µA V_GS = 0
40
I_DSS
Zero Gate Voltage
Drain Current (V_GS = 0)
V_DS = Max Rating
V_DS = Max Rating T_C = 125°C
I_GSS
Gate-body Leakage
Current (V_DS = 0)
V_GS = ± 20V
°C/W
°C/W
°C
Max.
Unit
V
1
µA
10
µA
±100
nA
ON ^(*)
Symbol
V_GS(th)
R_DS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
V_DS = V_GS
I_D = 250 µA
V_GS = 10 V
I_D = 95A
Min.
2
Typ. Max.
4
0.0039 0.0043
Unit
V
Ω
DYNAMIC
Symbol
g_fs ^(*)
C_iss
C_oss
C_rss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
V_{DS =} 15 V
I_D = 95 A
V_DS = 25V, f = 1 MHz, V_GS = 0
Min.
Typ.
200
5800
1500
200
Max.
Unit
S
pF
pF
pF
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