STB190NF04 Datasheet, PDF (1/9 Pages) STMicroelectronics – N-CHANNEL 40V - 3.9 mW - 120A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET

STP190NF04
STB190NF04 STB190NF04-1
N-CHANNEL 40V - 3.9 mΩ - 120A D²PAK/I²PAK/TO-220
STripFET™ II POWER MOSFET
PRELIMINARY DATA
TYPE
V_DSS
R_DS(on)
STB190NF04/-1
STP190NF04
40 V <0.0043 Ω
40 V <0.0043 Ω
s TYPICAL R_DS(on) =3.9 mΩ
s STANDARD THRESHOLD DRIVE
s 100% AVALANCHE TESTED
I_D
120 A
120 A
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
APPLICATIONS
s HIGH CURENT, HIGH SWITCHING SPEED
s AUTOMOTIVE
3
1
D²PAK
TO-263
123
I²PAK
TO-262
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D(•)
Drain Current (continuous) at T_C = 25°C
I_D
Drain Current (continuous) at T_C = 100°C
I_DM(••) Drain Current (pulsed)
P_tot
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt ⁽¹⁾ Peak Diode Recovery voltage slope
E_AS ⁽¹⁾ Single Pulse Avalanche Energy
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(•) Current limited by package
February 2004
Value
40
40
± 20
120
120
480
310
2.07
7
860
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
(••) Pulse width limited by safe operating area.
1) ISD ≤190A, di/dt ≤600A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
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