 English |
|
|
|
|
|
|
|
| STB160NF03L Datasheet, PDF (2/9 Pages) STMicroelectronics – N-CHANNEL 30V - 0.0021ohm - 160A D2PAK STripFET™ POWER MOSFET | |||
| |||
| ◁ |
STB160NF03L
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max
0.5
Rthj-amb Thermal Resistance Junction-ambient Max
62.5
Tl
Maximum Lead Temperature For Soldering Purpose
300
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V(BR)DSS Drain-source
ID = 250 µA, VGS = 0
30
V
Breakdown Voltage
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
µA
10
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ±15V
±100
nA
ON (1)
Symbol
VGS(th)
RDS(on)
ID(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
On State Drain Current
Test Conditions
VDS = VGS, ID = 250µA
VGS = 10 V, ID = 80 A
VGS = 5 V, ID = 80 A
VDS > ID(on) x RDS(on)max,
VGS = 10V
Min.
1
160
Typ. Max.
0.0021 0.0030
0.0042 0.0070
Unit
V
â¦
â¦
A
DYNAMIC
Symbol
gfs (1)
Parameter
Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max,
ID =80 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
210
5600
1720
310
Max.
Unit
S
pF
pF
pF
2/9
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese