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STB160NF03L Datasheet, PDF (1/9 Pages) STMicroelectronics – N-CHANNEL 30V - 0.0021ohm - 160A D2PAK STripFET™ POWER MOSFET | |||
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STB160NF03L
N-CHANNEL 30V - 0.0021⦠- 160A D2PAK
STripFET⢠POWER MOSFET
TYPE
VDSS
RDS(on)
STB160NF03L
30 V < 0.0030 â¦
s TYPICAL RDS(on) = 0.0021â¦
s LOW THRESHOLD DRIVE
s ULTRA LOW ON-RESISTANCE
s VERY LOW GATE CHARGE
s 100% AVALANCHE TESTED
ID
160 A
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique âSingle Feature
Sizeâ¢â strip-based process. The resulting tran-
sistor shows extremely high packing density with
ultra low on-resistance, superior switching charac-
teristics and less critical alignment steps therefore
a remarkable manufacturing reproducibility. This
device is particularly suitable for high current, low
voltage switching application where efficiency is
crucial.
3
1
D2PAK
(TO-263)
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s BUCK CONVERTERS IN HIGH
PERFORMANCE TELECOM AND VRMs
s DC-DC CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kâ¦)
VGS
Gate- source Voltage
ID(1)
Drain Current (continuos) at TC = 25°C
ID
Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
EAS (2) Single Pulse Avalanche Energy
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
(q) Pulse width limited by safe operating area
February 2001
Value
30
30
±15
160
113
640
300
2
2
â65 to 175
175
Unit
V
V
V
A
A
A
W
W/°C
J
°C
°C
(1) Limited by Package
(2) ISD â¤100A, di/dt â¤300A/µs, VDD ⤠V(BR)DSS, Tj ⤠TJMAX.
1/9
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