START540 Datasheet, PDF (2/7 Pages) STMicroelectronics – NPN Silicon RF Transistor

START540
ELECTRICAL CHARACTERISTICS (T_j=25 ^oC,unless otherwise specified)
Symbol
I_cbo
I_ebo
Hfe
NFmin
Ga
|S21|²
Gms ⁽¹⁾
P_-1dB
OIP3
Parameter
Collector cutoff current
Emitter-base cutoff
current
DC current gain
Minimim noise figure
NFmin associated gain
Insertion power gain
Maximum stable gain
1dB compression point
Ouput third order
intercept point
Test Conditions
Vcb = 5V, Ie = 0A
Veb = 1.5V, Ic = 0A
Ic = 20mA, Vce = 3V
Ic = 5mA, Vce = 2V, f = 1.8GHz,
Z_s = Z_sopt
Ic = 5mA, Vce = 2V, f = 1.8GHz
Ic = 20mA, Vce = 2V, f = 1.8GHz
Ic = 20mA, Vce = 2V, f = 1.8GHz
Ic = 20mA,Vce = 2V, f = 1.8GHz
Ic = 20mA,Vce = 2V, f = 1.8GHz
Min.
100
Note(1): Gms = | S21 / S12 |
Typ.
160
0.9
16
19.5
22.7
13
24
Max.
150
15
Unit
nA
µA
dB
dB
dB
dB
dBm
dBm
PINOUT
4
3
1
2
SOT343
Top view
PIN CONNECTION
Pin No. Description
1
BASE
3
COLLECTOR
2,4
EMITTER
2/7