START540 Datasheet, PDF (1/7 Pages) STMicroelectronics – NPN Silicon RF Transistor

START540
NPN Silicon RF Transistor
• LOW NOISE FIGURE: NFmin = 0.9dB
@ 1.8GHz, 5mA, 2V
• HIGH OUTPUT IP3 = 24dBm
@ 1.8GHz, 20mA, 2V
• GOOD RUGGEDNESS BVceo = 4.5V
• TRANSITION FREQUENCY 45GHz
• ULTRA MINIATURE SOT343 PACKAGE
DESCRIPTION
The START540 is a member of the START family
that provide the market with the state of the art of RF
silicon process. Manufacturated in the third
generation of ST proprietary bipolar process, it
offers the highest linearity with excellent Noise
Figure for 4.5V breakdown voltage(BVceo).
It reaches performance level only achieved with
GaAs products before.
SOT343 (SC70)
ORDER CODE
START540TR
BRANDING
540
APPLICATIONS
• LNA FOR GSM/DCS, DECT, PDC, PCS,
PCN, CDMA, W-CDMA
• GENERAL PURPOSE 500MHz-5GHz
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_ceo
V_cbo
V_ebo
I_c
I_b
P_tot
Collector emitter voltage
Collector base voltage
Emitter base voltage
Collector current
Base current
Total dissipation, T_s = 101
T_stg
Storage temperature
T_j
Max. operating junction temperature
ABSOLUTE MAXIMUM RATINGS
R_thjs
Thermal Resistance Junction soldering point
July, 3 2002
Value
4.5
15
1.5
40
4
180
-65 to 150
150
Unit
V
V
V
mA
mA
mW
o_C
o_C
270
o_C/W
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