SGSD100_03 Datasheet, PDF (2/6 Pages) STMicroelectronics – COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

SGSD100/SGSD200
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
0.96
o_C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICBO
Collector Cut-off
Current (IE = 0)
VCE = 80 V
VCE = 80 V Tc = 100 ^oC
ICEV
Collector Cut-off
VCE = 80 V
Current (VBE = -0.3V) VCE = 80 V Tc = 100 ^oC
ICEO
Collector Cut-off
Current (IB = 0)
VCE = 60 V
VCE = 60 V Tc = 100 ^oC
IEBO
Emitter Cut-off Current
(IC = 0)
VCEO(sus)∗ Collector-Emitter
Sustaining Voltage
(IB = 0)
VCE(sat)∗ Collector-Emitter
Saturation Voltage
VEB = 5 V
IC = 50 mA
IC = 5 A
IC = 5 A
IC = 10 A
IC = 10 A
IC = 20 A
IC = 20 A
IB = 20 mA
IB = 20 mA
IB = 40 mA
IB = 40 mA
IB = 80 mA
IB = 80 mA
Tc = 100^oC
Tc = 100 ^oC
Tc = 100 ^oC
VBE(sat)∗ Base-Emitter
Saturation Voltage
IC = 20 A IB = 80 mA
IC = 20 A IB = 80 mA Tc = 100 ^oC
VBE∗
Base-Emitter Voltage IC = 10 A VCE = 3 V
IC = 10 A VCE = 3 V Tc = 100 ^oC
hFE∗ DC Current Gain
IC = 5 A
IC = 5 A
IC = 10 A
IC = 10 A
IC = 20 A
IC = 20 A
VCE = 3 V
VCE = 3 V
VCE = 3 V
VCE = 3 V
VCE = 3 V
VCE = 3 V
Tc = 100 ^oC
Tc = 100 ^oC
Tc = 100 ^oC
VF∗ Diode Forward Voltage IF = 5 A
IF = 5 A Tc = 100 ^oC
IF = 10 A
IF = 10 A Tc = 100 ^oC
IF = 20 A
IF = 20 A Tc = 100 ^oC
Es/b Second Breakdown
Energy
VCC = 30 V L = 3 mH
VCC = 30 V L = 3 mH Tc = 100 ^oC
Is/b
Second Breakdown
Current
VCE = 25 V
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP type voltage and current values are negative.
t = 500 ms
Min.
80
1
600
500
300
250
250
6
Typ.
Max.
0.5
1.5
0.1
2
0.5
1.5
2
Unit
mA
mA
mA
mA
mA
mA
mA
V
0.95 1.2
V
0.8
V
1.2 1.75
V
1.3
V
2
3.5
V
2.3
V
2.6 3.3
V
2.5
V
1.8
3
V
1.6
V
5000
8000
4000
8000
2000
2000
15000
12000
6000
1.2
V
0.85
V
1.6
V
1.4
V
2.3
V
1.3
V
mJ
mJ
A
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