SGSD100_03 Datasheet, PDF (1/6 Pages) STMicroelectronics – COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

SGSD100
®
SGSD200
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
s STMicroelectronics PREFERRED
SALESTYPES
s COMPLEMENTARY PNP - NPN DEVICES
s MONOLITHIC DARLINGTON
CONFIGURATION
APPLICATIONS:
s AUDIO POWER AMPLIFIER
s DC-AC CONVERTER
s EASY DRIVER FOR LOW VOLTAGE
DC MOTOR
s GENERAL PURPOSE SWITCHING
APPLICATIONS
DESCRIPTION
The SGSD100 is Silicon Epitaxial-Base NPN
power transistor in Monolithic Darlington
configuration mounted in TO-218 plastic
package.
It is inteded for use in general purpose and high
current amplifier applications.
The complementary PNP type is the SGSD200.
3
2
1
TO-218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCBO Collector-Base Voltage (IE = 0)
VCEO Collector-Emitter Voltage (IB = 0)
IC
Collector Current
ICM Collector Peak Current
IB
Base Current
IBM Base Peak Current
Ptot Total Dissipation at T_c ≤ 25 ^oC
Tstg Storage Temperature
Tj
Max. Operating Junction Temperature
For PNP types voltage and current values are negative.
October 2003
NPN
PNP
Value
SGSD100
SGSD200
80
80
25
40
6
10
130
-65 to 150
150
Unit
V
V
A
A
A
A
W
o_C
o_C
1/6