SGSD100 Datasheet, PDF (2/6 Pages) STMicroelectronics – COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

SGSD100/SGSD200
THERMAL DATA
Rthj-ca se Thermal Resistance Ju nction-case
Max
0.96
o_C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICBO Collecto r Cu t-of f
Current (IE = 0)
VCE = 80 V
VCE = 80 V Tc = 100 ^oC
I_CEV Collecto r Cu t-of f
V_CE = 80 V
Current (V_BE = -0.3V) V_CE = 80 V T_c = 100 ^oC
ICEO Collecto r Cu t-of f
Current (IB = 0)
VCE = 60 V
VCE = 60 V Tc = 100 ^oC
I_EBO
VCEO(su s)∗
V_{CE(sat )}∗
Emitter Cut-off Current
(I_C = 0)
Collecto r-Emitter
Sustaining Voltage
Collecto r-Emitter
Saturation Voltage
V_EB = 5 V
IC = 50 mA
I_C = 5 A
IC = 5 A
IC = 10 A
IC = 10 A
IC = 20 A
IC = 20 A
I_B = 20 mA
IB = 20 mA
IB = 40 mA
IB = 40 mA
IB = 80 mA
IB = 80 mA
Tc = 100 ^oC
Tc = 1 00 ^oC
Tc = 1 00 ^oC
V_{BE( sa t)}∗
VBE ∗
Ba se -Emit t er
Saturation Voltage
Base-Emitter Volta ge
h_FE∗ DC Current Gain
I_C = 20 A
I_C = 20 A
IC = 10 A
IC = 10 A
I_C = 5 A
I_C = 5 A
I_C = 10 A
IC = 10 A
IC = 20 A
IC = 20 A
I_B = 80 mA
I_B = 8 0 mA T_c = 1 00 ^oC
VCE = 3 V
VCE = 3 V Tc = 100 ^oC
V_CE = 3 V
V_CE = 3 V
V_CE = 3 V
VCE = 3 V
VCE = 3 V
VCE = 3 V
T_c = 1 00 ^oC
Tc = 100 ^oC
Tc = 100 ^oC
V_F∗ Diode Forward Voltage I_F = 5 A
I_F = 5 A T_c = 1 00 ^oC
I_F = 10 A
I_F = 10 A T_c = 100 ^oC
I_F = 20 A
I_F = 20 A T_c = 100 ^oC
Es/b Second Breakdown
Energy
VCC = 30 V L = 3 mH
VCC = 3 0 V L = 3 mH Tc = 1 00 ^oC
I_s/b Second Breakdown
Current
V_CE = 25 V
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP type voltage and current values are negative.
t = 500 ms
Min.
80
1
600
500
300
250
250
6
Typ.
Max.
0. 5
1. 5
0. 1
2
0. 5
1. 5
2
Unit
mA
mA
mA
mA
mA
mA
mA
V
0.95 1. 2
V
0.8
V
1.2 1.75 V
1.3
V
2
3. 5
V
2.3
V
2.6 3. 3
V
2.5
V
1.8
3
V
1.6
V
5000
8000
4000
8000
2000
2000
150 00
120 00
6000
1.2
V
0.85
V
1.6
V
1.4
V
2.3
V
1.3
V
mJ
mJ
A
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