SGSD100 Datasheet, PDF (1/6 Pages) STMicroelectronics – COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

SGSD100
SGSD200
COMPLEMENTARY SILICON
POWER DARLINGTON TRANSISTORS
s SGS-THOMSON PREFERRED SALESTYPES
s COMPLEMENTARY PNP - NPN DEVICES
s MONOLITHIC DARLINGTON
CONFIGURATION
APPLICATIONS:
s GENERAL PURPOSE SWITCHING
APPLICATION
s GENERAL PURPOSE AMPLIFIERS
DESCRIPTION
The SGSD100 is silicon epitaxial-base NPN
power transistor in monolithic Darlington
configuration mounted in TO-218 plastic
package.
It is inteded for use in general purpose and high
current amplifier applications.
The complementary PNP type is the SGSD200.
3
2
1
TO-218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCBO Collector-Base Volta ge (IE = 0)
V_CEO Collector-Emitte r Voltage (I_B = 0 )
I_C Collector Current
ICM Collector Peak Current
IB
Base Current
IBM Base Peak Current
P_tot Total Dissipation at T_c ≤ 25 ^oC
T_stg Storage Temp erature
Tj Max. Operating Junction Temperature
For PNP types voltage and current values are negative.
September 1997
NPN
PNP
Value
SGSD 1 0 0
SGSD 2 0 0
80
80
25
40
6
10
130
-65 to 150
150
Unit
V
V
A
A
A
A
W
o_C
o_C
1/6