SD8250 Datasheet, PDF (2/5 Pages) STMicroelectronics – RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

SD8250
ELECTRICAL SPECIFICATIONS (T_case = 25^°C)
STATIC
Symb o l
Test Conditions
BVCBO
BVEBO
BV_CES
I_CES
hFE
IC = 35mA
IE = 15mA
I_C = 25mA
V_BE = 0V
VCE = 5V
IE = 0mA
IC = 0mA
I_B = 0mA
V_CE = 50V
IC = 1A
DYNAMIC
Symbol
Test Conditions
POUT
η_c
f = 960 — 1215 MHz
f = 960 — 1215 MHz
P_G f = 960 — 1215 MHz
N ot e:
Pulse Width = 20µSec
Duty Cycle = 5%
T_C
= 25°C
PIN = 40 W
P_IN = 40 W
P_IN = 40 W
VCC = 50 V
V_CC = 50 V
V_CC = 50 V
Valu e
Unit
Min. Typ. Max.
65 — — V
4.0 — — V
60 — — V
— — 20 mA
10 — — —
V al u e
Uni t
Min. Typ. Max.
250 295 — W
38 44 — %
8.0 8.7 — dB
TYPICAL PERFORMANCE
TYPICAL BROADBAND
TYPICA_PL_OWB_ER_RO_AA_MD_PLB_IFA_IEN_RD POWER
AMPLIFIER
I
N
P
U ^5.1
INPUT VSWR vs FREQUENCY
T
400
P
350
O
W
POUT
PIN = 40W
100
90
C
O
I
V
N
S
P
W_U
R_{T 3}._.1
E
R
300
PIN = 32W
O
U
250
T
P
U 200
PIN = 25W
L
80
L
E
C
70
T
O
R
60
V
S
W
R
.
1.1
960
1090
1215
T
W 150
PIN = 40W
η_C
E
F
50
F
FREQUENCY (MHz)
A
.
T
T
100
S
PIN = 32W
PIN = 25W
40
%
50
960
1090
FREQUENCY (MHz)
30
1215
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