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| SD8250 Datasheet, PDF (1/5 Pages) STMicroelectronics – RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS | |||
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SD8250
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
. REFRACTORY/GOLD METALLIZATION
. EMITTER SITE BALLASTED
. 5:1 VSWR CAPABILITY @ 1.75 dB RF
OVERDRIVE
. LOW THERMAL RESISTANCE
. INPUT/OUTPUT MATCHING
. OVERLAY GEOMETRY
. METAL/CERAMIC HERMETIC PACKAGE
. POUT = 250 W MIN. WITH 8.0 dB GAIN
.400 x .400 2LFL (S036)
hermetically sealed
ORDER CODE
SD8250
BRANDING
STAN250A
DESCRIPTION
The SD8250 is a high power Class C transistor
specifically designed for TACAN/DME pulsed out-
put and driver applications.
This device is designed for operation under mod-
erate pulse width and duty cycle pulse conditions
and is capable of withstanding 5:1 output VSWR
at rated RF overdrive.
Low RF thermal resistance and computerized au-
tomatic wire bonding techniques ensure high re-
liability and product consistency.
The SD8250 is supplied in the AMPAC⢠Hermetic
Metal/Ceramic package with internal Input/Output
matching structures.
PIN CONNECTION
1. Collector
2. Base
3. Emitter
4. Base
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symb ol
PDISS
IC
VCC
TJ
TSTG
Pa ra met er
Power Dissipation* (TC ⤠90°C)
Device Current*
Collector-Supply Voltage*
Junction Temperature (Pulsed RF Operation)
Storage Temperature
Value
Unit
575
W
20
A
55
V
250
°C
â 65 to +200
°C
THERMAL DATA
RTH(j-c)
Junction-Case Thermal Resistance(1)
*Applies only to rated RF amplifier operation
(1) Infra-Red Scan of Hot Spot Junction Temperature at Rated RF Operating Conditions
0.28
°C/W
July 19, 1994
1/5
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