SD57120 Datasheet, PDF (2/7 Pages) STMicroelectronics – RF POWER TRANSISTORS The LdmoSTFAMILY

SD57120
ELECTRICAL SPECIFICATION (T_case = 25 ^oC)
STATIC (Per Section)
Symb ol
V(BR)DSS VGS = 0V
IDSS
VGS = 0V
IGSS
VGS = 20V
VGS(Q)
VDS( ON)
VDS = 28V
VGS = 10V
G FS
VDS = 10V
CISS* VGS = 0V
COSS VGS = 0V
CRSS VGS = 0V
* Includes Internal Input Moscap.
Parameter
IDS = 10 mA
VDS = 28 V
VDS = 0 V
ID = 100 mA
ID = 3 A
ID = 3 A
VDS = 28 V
VDS = 28 V
VDS = 28 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
DYNAMIC
Symb ol
Parameter
P_OUT V_DD = 28V
f = 960 MHz
I_DQ = 800 mA
GPS
VDD = 28 V Pout = 120 W
IDQ = 800 mA
η_D
V_DD = 28 V P_out = 120W
I_DQ = 800 mA
Load f = 960 MHz V_DD = 28 V P_{o ut} = 120 W I_DQ = 800 mA
Mismatch ALL PHASE ANGLES
Min.
65
3.0
Typ .
0.7
3
175
44
1.7
M a x.
1
1
5.0
0.8
Un it
V
µA
µA
V
V
mho
pF
pF
pF
Min.
120
13
50
10:1
Typ .
14
M a x.
Un it
W
dB
%
VSWR
IMPEDANCE DATA
FREQ .
945 MHz
ZIN (Ω)
3.9 + j 4.9
960 MHz
4.1 - j 4.6
980 MHz
3.9 + j 5.2
Measured gate to gate and drain to drain respectively.
ZDL (Ω)
3.6 - j 5.1
3.24 - j 4.74
3.27 - j 6.9
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