SD57120 Datasheet, PDF (1/7 Pages) STMicroelectronics – RF POWER TRANSISTORS The LdmoSTFAMILY

®
SD57120
RF POWER TRANSISTORS
The LdmoST FAMILY
PRELIMINARY DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
ν EXCELLENT THERMAL STABILITY
ν COMMON SOURCE CONFIGURATION,
PUSH-PULL
ν POUT = 120 W with 13 dB gain @ 960 MHz
ν BeO FREE PACKAGE
ν INTERNAL INPUT MATCHING
DESCRIPTION
The SD57120 is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial
and industrial applications at frequencies up to
1.0 GHz. The SD57120 is designed for high gain
and broadband performance operating in
common source mode at 28V. Its internal
matching makes it ideal for base station
applications requiring high linearity.
M252
epoxy sealed
ORDER CODE
BRANDING
SD57120
XSD57120
PIN CONNECTION
ABSOLUTE MAXIMUM RATINGS (Tcase = 25 ^oC)
S ym b o l
V(BR)DSS
V_GS
I_D
P _DISS
Tj
T_STG
Parameter
Drain Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation (@ Tc= 70^oC)
Max. O perating Junction Temperature
Storage Temperature
THERMAL DATA
Rth (j-c) Junct ion-Case Thermal Resistance
1. Drain
2. Drain
3. Source
4. Gate
5. Gate
Value
65
± 20
14
236
200
-65 to 150
Uni t
V
V
A
W
o_C
o_C
0.55
o_{C/ W}
March 2000
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