SD2931-10 Datasheet, PDF (2/10 Pages) STMicroelectronics – RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs

SD2931-10
ELECTRICAL SPECIFICATION (T_CASE = 25°C)
STATIC
Symbol
Test Conditions
V_(BR)DSS V_GS = 0 V
I_DS = 100 mA
I_DSS
V_GS = 0 V
V_DS = 50 V
I_GSS
V_GS = 20 V
V_DS = 0 V
V_GS(Q)* V_DS = 10 V
I_D = 250 mA
V_DS(ON) V_GS = 10 V
I_D = 10 A
G_FS
V_DS = 10 V
I_D = 5 A
C_ISS
V_GS = 0 V
V_DS = 50 V
C_OSS
V_GS = 0 V
V_DS = 50 V
C_RSS
V_GS = 0 V
V_DS = 50 V
* _{VGS(Q) sorted with alpha/numeric code marked on unit.}
f = 1 MHz
f = 1 MHz
f = 1 MHz
DYNAMIC
Symbol
P_OUT
G_PS
η_D
Load
Mismatch
Test Conditions
V_DD = 50 V I_DQ = 250 mA
V_DD = 50 V I_DQ = 250 mA P_{OUT =} 150 W
V_DD = 50 V I_DQ = 250 mA P_OUT = 150 W
V_DD = 50 V I_DQ = 250 mA P_{OUT =} 150 W
All Phase Angles
f = 175 MHz
f = 175 MHz
f = 175 MHz
f = 175 MHz
Min. Typ. Max. Unit
125
V
50
µA
250
nA
1.5
4.0
V
3.0
V
5
6
mho
480
pF
190
pF
18
pF
Min.
150
14
55
10:1
Typ.
15
65
Max. Unit
W
dB
%
VSWR
IMPEDANCE DATA
D
Typical Input
Impedance
Z_DL
Typical Drain
Load Impedance
G
Zin
S
FREQ
30 MHz
175 MHz
Z_IN (Ω)
1.7 - j 5.7
1.2 - j 2.0
Z_DL (Ω)
6.8 + j 0.9
2.0 + j 2.4
V_GS SORTS
AA
1.5 - 1.6
J
2.8 - 2.9
BB
1.6 - 1.7
K
2.9 - 3.0
CC
1.7 - 1.8
L
3.0 - 3.1
DD
1.8 - 1.9
M
3.1 - 3.2
EE
1.9 - 2.0
N
3.2 - 3.3
A
2.0 - 2.1
P
3.3 - 3.4
B
2.1 - 2.2
Q
3.4 - 3.5
C
2.2 - 2.3
R
3.5 - 3.6
D
2.3 - 2.4
S
3.6 - 3.7
E
2.4 - 2.5
T
3.7 - 3.8
F
2.5 - 2.6
U
3.8 - 3.9
G
2.6 - 2.7
V
3.9 - 4.0
H
2.7 - 2.8
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