SD2931-10 Datasheet, PDF (1/10 Pages) STMicroelectronics – RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs

SD2931-10
RF POWER TRANSISTORS
HF/VHF/UHF N-CHANNEL MOSFETs
• GOLD METALLIZATION
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• P_OUT = 150 W MIN. WITH 14 dB GAIN @
175 MHz
• THERMALLY ENHANCED PACKAGING FOR
LOWER JUNCTION TEMPERATURES
DESCRIPTION
The SD2931-10 is a gold metallized N-Channel
MOS field-effect RF power transistor. Being
electrically identical to the standard SD2931
MOSFET, it is intended for use in 50 V dc large
signal applications up to 230 MHz.
The SD2931-10 is mechanical compatible to the
SD2931 but offers in addition a better thermal
capability (25 % lower thermal resistance),
representing the best-in-class transistors for ISM
applications, where reliability and ruggedness are
critical factors.
M174
epoxy sealed
PIN CONNECTION
4
1
3
1. Drain
2. Source
2
3. Gate
4. Source
ORDER CODES
Order Codes
SD2931-10
Marking
SD2931-10
Package
M174
ABSOLUTE MAXIMUM RATINGS (T_CASE = 25 ^°C)
Symbol
Parameter
V_(BR)DSS Drain Source Voltage
V_DGR
Drain-Gate Voltage (R_GS = 1MΩ)
V_GS
Gate-Source Volatge
I_D
Drain Current
P_DISS
Power Dissipation
T_j
Max. Operating Junction Temperature
T_STG
Storage Temperature
THERMAL DATA
R_th(j-c) Junction -Case Thermal Resistance
July 2004
Packaging
Plastic Tray
Value
Unit
125
V
125
V
±20
V
20
A
389
W
200
°C
-65 to +150
°C
0.45
°C/W
REV. 4
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