SD1680 Datasheet, PDF (2/7 Pages) STMicroelectronics – RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS

SD1680
ELECTRICAL SPECIFICATIONS (Tcase = 25^°C)
STATIC
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Test Conditions
BVCBO IC = 100mA
BVCEO IC = 100mA
BV_EBO I_E = 50mA
I_CES
V_CE = 28V
hFE
VCE = 5V
Tested Per Side
IE = 0mA
IB = 0mA
I_C = 0mA
I_E = 0mA
IC = 3A
Va l u e
Unit
Min. Typ. Max.
60 — — V
30 — — V
3.0 — — V
— — 10 mA
15 — 70 —
DYNAMIC
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Test Conditions
POUT* f = 900 MHz
VCE = 24 V
G_P* f = 900 MHz
V_CE = 24 V
IMD**
η_c
f = 900 MHz
f = 900 MHz
V_CE = 24 V
VCE = 24 V
COB
f = 1 MHz
VCB = 28 V
Note: * @ 1 dB Compression
** P_{OU T} = 100W PEP, ∆ F = 400KHz (2 tones)
Value
Unit
Min. Typ. Max.
ICQ = 2 x 300 mA 120 — — W
I_CQ = 2 x 300 mA 7.0 — — dB
I_CQ = 2 x 300 mA — −32 — dBc
ICQ = 2 x 300 mA 45 — — %
— — 100 pF
TYPICAL PERFORMANCE
POWER OUTPUT vs POWER INPUT
THERMAL RESISTANCE vs CASE
TEMPERATURE
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