SD1680 Datasheet, PDF (1/7 Pages) STMicroelectronics – RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS

SD1680
RF & MICROWAVE TRANSISTORS
800/900 MHz APPLICATIONS
. 915 - 960 MHz
. 24 VOLTS
. CLASS AB PUSH PULL
. INTERNAL INPUT MATCHING
. DESIGNED FOR HIGH POWER LINEAR
OPERATION
. HIGH SATURATED POWER CAPABILITY
. GOLD METALLIZATION FOR HIGH
RELIABILITY
. DIFFUSED EMITTER BALLAST
RESISTORS
. COMMON EMITTER CONFIGURATION
. POUT = 100 W MIN. WITH 7.0 dB GAIN
2 x .437 x .450 2LFL (M175)
epoxy sealed
ORDER CODE
B RA ND IN G
SD1680
SD1680
PIN CONNECTION
DESCRIPTION
The SD1680 is a gold metallized epitaxial silicon
NPN planar transistor using diffused emitter ballast
resistors for high linearity Class AB operation in
cellular base station applications.
ABSOLUTE MAXIMUM RATINGS (T_case = 25^°C)
Symb ol
Parameter
VCBO
V_CEO
V_EBO
IC
PDISS
T_J
T_STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance
November 1992
1. Collector
2. Base
3. Emitter
Value
Unit
60
V
30
V
3.0
V
25
A
310
W
+200
°_C
− 55 to +150
°_C
0.55
°C/W
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