MJE802_03 Datasheet, PDF (2/4 Pages) STMicroelectronics – SILICON NPN POWER DARLINGTON TRANSISTOR

MJE802
THERMAL DATA
Rthj-amb Thermal Resistance Junction-ambient
Max
3.13
o_C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICBO
Collector Cut-off
Current (IE = 0)
VCB = rated VCBO
VCB = rated VCBO
Tcase = 100 ^oC
ICEO
Collector Cut-off
Current (IB = 0)
VCE = rated VCEO
IEBO
Emitter Cut-off Current
(IC = 0)
VEB = 5 V
Collector-Emitter
VCEO(sus)∗ Sustaining Voltage
(IB = 0)
IC = 50 mA
VCE(sat)∗
Collector-Emitter
Saturation Voltage
IC = 4 A
IC = 1.5 A
VBE∗
Base-Emitter Voltage
IC = 4 A
IC = 1.5 A
hFE∗ DC Current Gain
IC = 4 A
IC = 1.5 A
hfe
Small Signal Current
Gain
IC = 1.5 A
f = 1 MHz
* Pulsed: Pulse duration = 300µs, duty cycle ≤ 1.5%
IB = 40 mA
IB = 30 mA
VCE = 3 V
VCE = 3 V
VCE = 3 V
VCE = 3 V
VCE = 3 V
Min. Typ.
80
100
750
1
Max.
100
500
100
2
3
2.5
3
2.5
Unit
µA
µA
µA
mA
V
V
V
V
V
Safe Operating Area
2/4