MJE802_03 Datasheet, PDF (1/4 Pages) STMicroelectronics – SILICON NPN POWER DARLINGTON TRANSISTOR

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MJE802
SILICON NPN POWER DARLINGTON TRANSISTOR
s STMicroelectronics PREFERRED
SALESTYPE
s NPN DARLINGTON
APPLICATIONS
s GENERAL PURPOSE SWITCHING
DESCRIPTION
The MJE802 is a silicon Epitaxial-Base NPN
transistor in monolithic Darlington configuration,
mounted in Jedec SOT-32 plastic package. It is
intended for use in medium power linear and
switching applications.
1
2
3
SOT-32
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCBO
VCEO
VEBO
IC
IB
Ptot
Tstg
Tj
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (IB = 0)
Base-Emitter Voltage (IC = 0)
Collector Current
Base Current
Total Power Dissipation at Tcase ≤ 25 ^oC
Storage Temperature
Max Operating Junction Temperature
September 2003
Value
80
80
5
4
0.1
40
-65 to 150
150
Unit
V
V
V
A
A
W
o_C
o_C
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