MJE210 Datasheet, PDF (2/4 Pages) STMicroelectronics – SILICON PNP TRANSISTOR

MJE210
THERMAL DATA
Rthj-amb Thermal Resistance Junction-ambient
Rthj-case Thermal Resistance Junction-case
Max
Max
83.4
8.34
o_C/W
o_C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICBO
Collector Cut-off
Current (IE = 0)
VCB = -40 V
VCB = -40 V
TCASE = 125^oC
IEBO
Emitter Cut-off Current
(IC = 0)
VCEO(sus)∗
Collector-Emitter
Sustaining Voltage
VEB = -8 V
IC = -10 mA
Collector-Emitter
VCE(sat)∗ Sustaining Voltage
IC = -0.5 A
IC = -2 A
IC = -5 A
IB = -50 mA
IB = -0.2 A
IB = -1 A
VBE(sat)∗
Base-Emitter on
Voltage
IC = -5 A
IB = -1 A
VBE∗
Base-Emitter on
Voltage
IC =- 2 A
VCE = -1 V
hFE∗
DC Current Gain
IC = -0.5 A
IC = -2 A
IC = -5 A
VCE = -1 V
VCE = -1 V
VCE = -2 V
fT
Transistor Frequency IC = 0.1 A
f = 10 MHz
VCE = 10 V
CCBO
Collector-base
Capacitance
VCB = -10 V
∗ Pulsed: Pulse duration = 300µs, duty cycle ≤ 1.5%
IE = 0
f = 0.1 MHz
Min.
-25
70
45
10
65
Typ.
Max.
-100
-100
-100
-0.3
-0.75
-1.8
-2.5
-1.6
180
120
Unit
nA
µA
nA
V
V
V
V
V
V
MHz
pF
2/4