MJE210 Datasheet, PDF (1/4 Pages) STMicroelectronics – SILICON PNP TRANSISTOR

MJE210
SILICON PNP TRANSISTOR
s SGS-THOMSON PREFERRED SALESTYPE
s PNP TRANSISTOR
DESCRIPTION
The MJE210 is a silicon epitaxial-base PNP
transistor in Jedec SOT-32 plastic package,
designed for low voltage, low power, high gain
aydio amplifier applications.
1
2
3
SOT-32
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCBO
VCEO
VEBO
IC
ICM
IB
Ptot
Tstg
Tj
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (IB = 0)
Base-Emitter Voltage (IC = 0)
Collector Current
Collector Peak Current
Base Current
Total Power Dissipation at Tcase ≤ 25 ^oC
at Tamb ≤ 25 ^oC
Storage Temperature
Max Operating Junction Temperature
September 1997
Value
-40
-25
-8
-5
-10
-1
15
1.5
-65 to 150
150
Unit
V
V
V
A
A
A
W
o_C
o_C
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