MJD112_10 Datasheet, PDF (2/10 Pages) STMicroelectronics – Complementary power Darlington transistors

Absolute maximum ratings
1
Absolute maximum ratings
Note:
Table 2. Absolute maximum ratings
Symbol
Parameter
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_B
P_TOT
T_STG
T_J
Collector-base voltage (I_E = 0)
Collector-emitter voltage (I_B = 0)
Emitter-base voltage (I_C = 0)
Collector current
Collector peak current
Base current
Total dissipation at T_case = 25 °C
Storage temperature
Max. operating junction temperature
For PNP types voltage and current values are negative.
Table 3. Thermal data
Symbol
Parameter
R_thJC Thermal resistance junction-case max.
MJD112, MJD117
Value
Unit
100
V
5
V
2
A
4
A
0.05
A
20
W
-65 to 150
°C
150
°C
Value
6.25
Unit
°C/W
2/10
Doc ID 3540 Rev 3