MJD112_10 Datasheet, PDF (1/10 Pages) STMicroelectronics – Complementary power Darlington transistors

MJD112
MJD117
Complementary power Darlington transistors
Features
■ Good h_FE linearity
■ High f_T frequency
■ Monolithic Darlington configuration with
integrated antiparallel collector-emitter diode
Application
■ Linear and switching industrial equipment
Description
The devices are manufactured in planar
technology with “base island” layout and
monolithic Darlington configuration.
.
TAB
3
1
TO-252
(DPAK)
Figure 1. Internal schematic diagram
R₁ typ. = 15 kΩ
R₂ typ. = 100 Ω
Table 1. Device summary
Order codes
Marking
MJD112T4
MJD117T4
MJD112
MJD117
January 2010
Polarity
NPN
PNP
Doc ID 3540 Rev 3
Package
DPAK
DPAK
Packaging
Tape and reel
Tape and reel
1/10
www.st.com
10