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LET9006 Datasheet, PDF (2/4 Pages) STMicroelectronics – RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
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LET9006
ELECTRICAL SPECIFICATION (TCASE = 25 °C)
STATIC
Symbol
V(BR)DSS
IDSS
IGSS
VGS(Q)
VDS(ON)
gFS
CISS
COSS
CRSS
VGS = 0 V
VGS = 0 V
VGS = 5 V
VDS = 26 V
VGS = 10 V
VDS = 10 V
VGS = 0 V
VGS = 0 V
VGS = 0 V
Test Conditions
ID = 1 mA
VDS = 26 V
VDS = 0 V
ID = TBD
ID = 0.5 A
ID = 800 mA
VDS = 26 V
f = 1 MHz
VDS = 26 V
f = 1 MHz
VDS = 26 V
f = 1 MHz
DYNAMIC (f = 960 MHz)
Symbol
Test Conditions
POUT(1) VDD = 26 V IDQ = TBD
ηD(1)
VDD = 26 V IDQ = TBD POUT = 6 W
Load
VDD = 26 V IDQ = TBD
mismatch ALL PHASE ANGLES
(1) 1 dB Compression point
POUT = 6 W
DYNAMIC (f = 920 - 960 MHz)
Symbol
Test Conditions
Pout(1)
VDD = 26 V IDQ = TBD
GP
VDD = 26 V IDQ = TBD POUT = 6 W
ηD(1)
VDD = 26 V
(1) 1 dB Compression point
IDQ = TBD POUT = 6 W
Min. Typ. Max. Unit
65
1
µA
1
µA
2.0
5.0
V
0.9
V
TBD
mho
TBD
pF
TBD
pF
TBD
pF
Min.
7
55
Typ.
8
65
Max. Unit
W
%
10:1 VSWR
Min. Typ. Max. Unit
6
7
W
17
dB
55
60
%
2/4
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