LET9006 Datasheet, PDF (1/4 Pages) STMicroelectronics – RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

LET9006
RF POWER TRANSISTORS
Ldmos Enhanced Technology in Plastic Package
TARGET DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• P_OUT = 6 W with 17 dB gain @ 960 MHz / 26V
• NEW LEADLESS PLASTIC PACKAGE
• ESD PROTECTION
• SUPPLIED IN TAPE & REEL OF 3K UNITS
DESCRIPTION
The LET9006 is a common source N-Channel, en-
hancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 26 V in common source mode at frequencies up
to 1 GHz. LET9006 boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS
technology mounted in the innovative leadless
SMD plastic package, PowerFLAT™.
It is ideal for digital cellular BTS applications
requiring high linearity.
PowerFLAT™(5x5)
ORDER CODE
LET9006
BRANDING
9006
PIN CONNECTION
TOP VIEW
ABSOLUTE MAXIMUM RATINGS (T_CASE = 25 ^°C)
Symbol
Parameter
V_(BR)DSS Drain-Source Voltage
V_GS
Gate-Source Voltage
I_D
Drain Current
P_DISS Power Dissipation (@ Tc = 70°C)
Tj
Max. Operating Junction Temperature
T_STG
Storage Temperature
Value
Unit
65
V
-0.5 to +15
V
1
A
16
W
150
°C
-65 to +150
°C
THERMAL DATA
R_th(j-c) Junction -Case Thermal Resistance
5
°C/W
April, 15 2003
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