IRFBC30 Datasheet, PDF (2/8 Pages) STMicroelectronics – N - CHANNEL 600V - 1.8 ohm - 3.6A - TO-220 PowerMESH]II MOSFET

IRFBC30
THERMAL DATA
R_thj-case
Rth j -a mb
R_thc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
1.7
62.5
0.5
300
o_C/W
oC/W
o_C/W
o_C
AVALANCHE CHARACTERISTICS
Symbo l
I_AR
E_AS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T_j max)
Single Pulse Avalanche Energy
(starting T_j = 25 ^oC, I_D = I_AR, V_DD = 50 V)
Max Value
3.6
300
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
OFF
Symbo l
V _{(BR)D SS}
I_DSS
I_GSS
Pa ram et e r
Test Conditions
Dr ain- s ou rc e
Breakdown Voltage
ID = 250 µ A VGS = 0
Zero G ate Voltage
V_DS = Max Rating
Drain Current (V_GS = 0) V_DS = Max Rating
T_c = 125 ^oC
Gate-body Leakage
Current (V_DS = 0)
V_GS = ± 20 V
Min.
600
Typ. Max.
1
50
± 100
Unit
V
µA
µA
nA
ON (∗)
Symbo l
V_GS(th)
R_DS(on)
I_{D(o n)}
Pa ram et e r
Test Conditions
Gate Threshold
Voltage
V_DS = V_GS I_D = 250 µA
Static Drain-source On V_GS = 10V I_D = 2.2 A
Resistance
On Stat e Drain Current V_DS > I_{D(o n)} x R_{DS(on )max}
V_GS = 10 V
Min.
2
T yp.
3
Max.
4
Unit
V
1.8
2.2
Ω
3.6
A
DYNAMIC
Symbo l
g_fs (∗)
C_iss
C_oss
C_rss
Pa ram et e r
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Cap a ci t an c e
Test Conditions
V_DS > I_{D(o n)} x R_{DS(on )ma x} I_D = 2.2 A
Min.
2.5
T yp.
Max.
Unit
S
V_DS = 25 V f = 1 MHz V_GS = 0
475
pF
72
pF
10
pF
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