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IRFBC30 Datasheet, PDF (1/8 Pages) STMicroelectronics – N - CHANNEL 600V - 1.8 ohm - 3.6A - TO-220 PowerMESH]II MOSFET | |||
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IRFBC30
N - CHANNEL 600V - 1.8 ⦠- 3.6A - TO-220
PowerMESH⢠ÎÎ MOSFET
TYPE
VDSS
RDS(on)
ID
IRFBC30
600 V < 2.2 â¦
3.6 A
s TYPICAL RDS(on) = 1.8 â¦
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH⢠ÎÎ is the evolution of the first
generation of MESH OVERLAY⢠. The layout
refinements introduced greatly improve the
Ron*area figure of merit while keeping the device
at the leading edge for what concerns switching
speed, gate charge and ruggedness.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
Parameter
VDS Drain-source Voltage (VGS = 0)
V DGR
VGS
ID
ID
Drain- gate Voltage (RGS = 20 kâ¦)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM (â¢) Drain Current (pulsed)
Ptot Total Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(â¢) Pulse width limited by safe operating area
Value
600
600
± 20
3.6
2.3
14
75
0.6
3
-65 to 150
150
( 1) ISD â¤3.6 A, di/dt ⤠60 A/µs, VDD ⤠V(BR)DSS, Tj ⤠TJMAX
Un it
V
V
V
A
A
A
W
W /o C
V/ns
oC
oC
January 2000
1/8
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