IRF840 Datasheet, PDF (2/8 Pages) Motorola, Inc – N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR

IRF840
THERMAL DATA
R_{t hj-ca se}
Rth j -a m b
R_{thc- si nk}
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
1.0
62.5
0.5
300
o_C/W
oC/W
o_C/W
o_C
AVALANCHE CHARACTERISTICS
S ymb ol
IAR
E AS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T_j max)
Single Pulse Avalanche Energy
(starting T_j = 25 ^oC, I_D = I_AR , V_DD = 50 V)
Max Valu e
8.0
520
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (T_case = 25 ^oC unless otherwise specified)
OFF
S ymb ol
V(BR)DSS
IDSS
I_GSS
P a ra m et er
Test Conditions
Dr ain- sou rc e
Breakdown Voltage
ID = 250 µA VGS = 0
Zero G ate Voltage
VDS = Max Rating
Drain Current (V_GS = 0) V_DS = Max Rating
T_c = 125 ^oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
Min.
500
Typ. Max.
1
50
± 100
Unit
V
µA
µA
nA
ON (∗)
S ymb ol
V GS(th )
R_{DS( o n )}
I_{D(o n)}
P a ra m et er
Test Conditions
Gate Threshold
Voltage
V_DS = V_GS I_D = 250 µA
Static Drain-source On V_GS = 10V I_D = 4.8 A
Resistance
On St ate Drain Current V_DS > I_D(on) x R_{DS(on) max}
VGS = 10 V
Min.
2
Typ .
3
Max.
4
Unit
V
0.75 0.85
Ω
8.0
A
DYNAMIC
S ymb ol
gfs (∗)
Ciss
C_oss
Crss
P a ra m et er
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max ID = 4.8 A
Min.
4.9
Typ .
Max.
Unit
S
VDS = 25 V f = 1 MHz VGS = 0
1300
pF
200
pF
18
pF
2/8