ESDLIN1524BJ Datasheet, PDF (2/7 Pages) STMicroelectronics – TRANSIL™ diode for ESD protection

Characteristics
1
Characteristics
ESDLIN1524BJ
Table 3.
Symbol
Electrical characteristics (T_amb = 25° C)
Parameter
V_RM Stand-off voltage
V_BR Breakdown voltage
V_CL Clamping voltage
I_RM Leakage current @ V_RM
I_R
Breakdown current @ V_BR
I_PP Peak pulse current
C Junction capacitance
I
I_PP
V_{C L}V_{B R} V_{R M}
I_R
I_{R M}
V
I_{R M VR MVB R VC L}
I_R
I_PP
Types
I_RM @V_RM
V_BR @ I_R ⁽¹⁾
nA
V
V
mA
Typ Max
Min Typ Max
V_{CL max} @ I_PP 8/20 µs
VAV A
C ⁽²⁾
pF
αT⁽³⁾
10^-4/°C
Typ Max Max
ESDLIN1524BJ(15V) 1 50 15 17.1 18.9 20.3 5 25 1 35 5
8.8
16 20
ESDLIN1524BJ(24V) 1 50 24 25.4 27.8 30.3 5 40 1 50 3
9.6
1. Pulse test: t_p < 50 ms
2. V_R = 0 V, F= 1 MHz
3. ∆V_BR = αT x (T_amb -25) x V_{BR(25° C)}
Figure 1.
Relative variation of peak pulse
power versus initial junction
temperature
Figure 2. Peak pulse power versus
exponential pulse duration
P_PP[Tj initial] / P_PP [Tj initial=25°C]
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
TJ(°C)
25
50
75
100
125
150
175
P_PP(W)
1.E+03
1.E+02
1.E+01
1
Tj initial =25 °C
tP(µs)
10
100
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